1C31025G031C31025G03
1C31025G03用PLC的編程軟件接上PLC測(cè)試看看PLC的參數(shù)是，工程里設(shè)置的參數(shù)是否和測(cè)試出來的一致。

PLC技術(shù)在工業(yè)自動(dòng)化、物聯(lián)網(wǎng)控制等領(lǐng)域的應(yīng)用

以目前來看，PLC技術(shù)廣泛應(yīng)用于工業(yè)自動(dòng)化、汽車電子、交通運(yùn)輸、物聯(lián)網(wǎng)控制等各個(gè)行業(yè)，它在這些領(lǐng)域的作用大致可分為四大類。

一、用于實(shí)現(xiàn)各種運(yùn)動(dòng)控制

PLC控制器是一種具有微處理機(jī)的數(shù)字電子設(shè)備，用于自動(dòng)化控制的數(shù)字邏輯控制器，可以將控制指令隨時(shí)加載內(nèi)存內(nèi)儲(chǔ)存與執(zhí)行，可編程控制器由內(nèi)部CPU，指令及資料內(nèi)存、輸入輸出單元、電源模組、數(shù)字模擬等單元所模組化組合成。PLC控制器可以用于圓周運(yùn)動(dòng)或直線運(yùn)動(dòng)的控制，如今主要的PLC控制器產(chǎn)品幾乎都有運(yùn)動(dòng)控制功能，它運(yùn)用在各種機(jī)械、機(jī)床、機(jī)器人、電梯等場(chǎng)合。

從控制機(jī)構(gòu)配置來說，早期直接用于開關(guān)量I/O模塊連接位置傳感器和執(zhí)行機(jī)構(gòu)，現(xiàn)在一般使用的運(yùn)動(dòng)控制模塊，如可驅(qū)動(dòng)步進(jìn)電機(jī)或伺服電機(jī)的單軸或多軸位置控制模塊。

二、實(shí)現(xiàn)工業(yè)的過程控制

作為工業(yè)控制計(jì)算機(jī)，PLC控制器能編制各種各樣的控制算法程序，完成閉環(huán)控制，在工業(yè)過程控制中，PLC主要是對(duì)溫度、壓力、流量等模擬量等參數(shù)進(jìn)行閉環(huán)控制。大中型PLC都有PID模塊，PID調(diào)節(jié)是一般閉環(huán)控制系統(tǒng)中用得較多的調(diào)節(jié)方法，目前許多小型PLC控制器也具有此功能模塊。

三、實(shí)現(xiàn)相關(guān)的數(shù)據(jù)處理

現(xiàn)代的PLC控制器具有數(shù)學(xué)運(yùn)算、數(shù)據(jù)傳送轉(zhuǎn)換等功能，可以完成數(shù)據(jù)的采集、分析及處理；這些數(shù)據(jù)可以與存儲(chǔ)在存儲(chǔ)器中的參考值比較，完成一定的控制操作，也可以利用通信功能傳送到別的智能裝置。在大型的控制系統(tǒng)，如無人控制的柔性制造系統(tǒng)中，PLC控制器是核心部件。

四、PLC通信和物聯(lián)網(wǎng)
Some manufacturers of integrated gate commutated thyristor IGCT (integrated gate commutated thyristor) are also called GCT (gate commutated thyristor), that is, gate commutated thyristor, which is a new power electronic device emerging in the late 1990s.

The integrated gate commutated thyristor IGCT combines the advantages of IGBT and GTO. Its capacity is equivalent to that of GTO, but its switching speed is 10 times faster than that of GTO. Moreover, it can eliminate the huge and complex buffer circuit of GTO application, but the driving power required is still large. At present, IGCT is in fierce competition with IGBT and other new devices, trying to eventually replace GTO in high-power applications. The industry believes that the high proportion of power electronic devices is one of the two characteristics of the new power system. For example, the internationally leading flexible DC transmission technology in the fields of new energy grid connection, offshore wind power transmission and UHV combines advanced technologies in power electronics, power system, communication principles and so on. Modular multilevel converter, DC circuit breaker and DC transformer d on power electronic technology are the key equipment to build DC power grid. Large capacity semiconductor devices are the core components of these key equipment. Low cost, low loss and high reliability of large capacity semiconductor devices are very important to improve the economy and safety of DC power grid equipment. Among high-power power electronic devices, IGBT (insulated gate bipolar transistor) is mainly used at present, while IGCT (integrated gate to gate commutated thyristor) is a more potential semiconductor device. The market is mainly occupied by foreign enterprises such as abb in Switzerland, Infineon in Germany, Ge in the United States, and there is a wide space for domestic substitution